Article ID Journal Published Year Pages File Type
548526 Microelectronics Reliability 2007 5 Pages PDF
Abstract

This paper presents oxide trap characterization of nitrided and non-nitrided gate oxide N-MOSFETs using low frequency noise (LFN) measurements. The identification of defects generated by the gate oxide growth and the nitridation process is carried out using random telegraph signal noise analysis. Significant properties of traps induced by the nitridation process are pointed out. Main trap parameters, such as their nature, capture and emission times, cross-sections, energy levels, and position with respect to the Si/SiO2 interface, are extracted. These results illustrate the potential of noise investigation for oxide characterizations.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , , ,