| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548827 | Microelectronics Reliability | 2016 | 4 Pages |
Abstract
•The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors is proposed.•Narrowing of the bandgap in the base region of SiGe transistor eliminates ELDRS at room temperature irradiation.•ELDRS can appear at low-temperature irradiation in SiGe transistors.
The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors for room and low-temperature irradiation is described. The mechanism is connected with narrowing of the bandgap in transistor base region due to Ge content.
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Physical Sciences and Engineering
Computer Science
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Authors
V.S. Pershenkov, A.S. Bakerenkov, V.A. Felitsyn, A.S. Rodin, V.A. Telets, V.V. Belyakov,