Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 104 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.

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