| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549021 | Microelectronics Reliability | 2013 | 5 Pages |
•Read disturb measurements on HfO2-based RRAMs were performed.•The influence of the Forming conditions and stress entity on the robustness of the low resistance state was investigated.•Electrodes material affects the robustness of the cell.•A qualitative picture of the physical mechanism ruling the resistive state transition was given.
An experiment of read disturb is performed on HfO2 based MIM devices designed for resistive memories (RRAM). The experiment elucidates the role of the forming conditions and the electrode materials on the robustness of the low resistance state against electrical disturb. It is performed in three steps: (1) two sets of samples with different electrodes (TiN and Pt) are formed using voltage pulses with different amplitudes; (2) formed samples are subject to constant voltage stress of different entities; (3) the current flowing through the MIM during stress is monitored and processed.
