| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549041 | Microelectronics Reliability | 2013 | 5 Pages |
•A new TCAD tool taking into account dose effects is presented: E.CO.R.C.E.•We model Total Ionizing Dose on power MOSFET.•Total Ionizing Dose at room temperature can be modeled using only one trap level.•Four traps levels are needed to model temperature effects during irradiation.•Traps parameters can be quickly estimated using a simple 1D MOS capacitor.
A new TCAD modeling tool taking into account dose effects is presented: E.CO.R.C.E. It allows a study of dose and temperature dependence on a power MOSFET. Modeling results are compared to experimental data. It is shown that threshold voltage shift at room temperature can be modeled with a good accuracy using only one hole trap level. However, temperature effect on threshold voltage shift cannot be fitted with less than four hole traps levels. More generally, this tool allows a better understanding of mechanisms involved during irradiation.
