| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549073 | Microelectronics Reliability | 2013 | 5 Pages |
Abstract
•GaN HEMT with different gate field-plate geometries have been tested.•Increasing field-plate length improves the device large signal performances.•Increasing field-plate length improves device stability during RF stress test.
GaN on SiC HEMTs fabricated with different gate-connected field plate structures have been tested by means of RF reliability tests. The increase in field-plate length yielded an improvement of both the dynamic and the reliability performance during RF testing. Results are thus suggesting that reliability in field-plate devices can be improved by a proper design of the field-plate geometry.
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Authors
A. Chini, F. Soci, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, G. Meneghesso, E. Zanoni,