| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549118 | Microelectronics Reliability | 2013 | 4 Pages |
Abstract
This paper develops an improved electrostatic discharge (ESD) protection solution built with a novel dual-gate, depletion-mode pHEMT device in the GaAs technology. The successful implementation of this ESD clamp in a single ended passive RF mixer with a Human Body Model (HBM) ESD protection level of over 1.8 kV is also demonstrated. The ESD protected mixer is also shown to maintain its RF integrity with only a minimal degradation in the conversion loss and noise figure.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Qiang Cui, Shuyun Zhang, Juin J. Liou,