| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549137 | Microelectronics Reliability | 2013 | 7 Pages |
Abstract
In this paper, ESD protection devices for power rails in a PDP scan IC are studied. By numerical simulation, current flow distribution of LIGBT under ESD stress is analyzed. The proposed latchup free LIGBT has additional discharge mechanism to optimize the discharge path, and much smaller discharge resistance can be obtained. As demonstrated by TLP test, optimized LIGBT has 33% larger It2 than HV diode, and its Vt2 is only 27 V higher than its breakdown voltage.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang, Zhaoji Li,