Article ID Journal Published Year Pages File Type
549259 Microelectronics Reliability 2012 7 Pages PDF
Abstract

With the increasing complexity of the power amplifier (PA) module architecture, the probability of a thermally induced stress related failure mechanism increases. To help evaluate the increase in module complexity, a more sophisticated in situ monitored thermal cycle reliability test is available. The module is monitored in real time using a resistance daisy chain methodology designed to provide coverage using resistance feedback throughout the entire hierarchy of the module and carrier board interface. Monitored temperature cycling allows for real time failure feedback and enhanced failure signature information. Further, the testing technique has proven to be a valuable method for capturing the early stages of a module mechanical failure at the temperature extremes. Moreover, statistical evaluation of the failure data (Weibull analysis) is improved and better accuracy of the failures in time (FIT) rate can be determined.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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