| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549270 | Microelectronics Reliability | 2012 | 6 Pages |
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and non-strained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes.
► High-energy neutrons effect on strained and non-strained FD SOI MOSFETs and MuGFETs. ► Device response to the neutrons is assessed through the variations of VT and Gmmax. ► Neutron-induced total-dose effects in strained and non-strained device are different. ► Strain relaxation under neutrons exposure is one of the reasons of such a difference. ► Difference in the space charge conditions at the Si-BOX interface is another reason.
