| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549275 | Microelectronics Reliability | 2012 | 4 Pages |
Abstract
⺠A novel GaAs E/D-mode pHEMT technology was developed. ⺠The MIMS-gate insulator was high-k praseodymium oxide. ⺠This E-mode pHEMTs exhibit a gate VON of +1 V and a breakdown voltage of â5.6 V. ⺠These values were +7 V and â34 V for MIMS-gate D-mode pHEMTs, respectively. ⺠This high-k insulator in D-mode pHEMT can suppress the gate leakage current.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Chao-Hung Chen, Hsien-Chin Chiu, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien,