| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549299 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM observations of the fabricated devices (180 nm wide, 87 nm or 175 nm high) are presented and discussed. Electrical characteristics measurements and basic characterisation results obtained for these devices are described. A procedure for serial resistance extraction has been mentioned in more detail, due to its high value inherent in the process used. Several aspects of the device sensitivity to front- and back-gate control have been discussed from the point of view of its application in biochemical detectors.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Michał Zaborowski, Daniel Tomaszewski, Piotr Dumania, Piotr Grabiec,