| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549301 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
Double barrier metal–oxide–semiconductor tunnel diodes with ultrathin PECVD Si and thermal SiO2 layers were fabricated. The measured capacitance–voltage and current–voltage characteristics were interpreted and physical parameters of the structures were extracted by means of a theoretical model.
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Authors
B. Majkusiak, R.B. Beck, A. Mazurak, J. Grabowski,