| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549310 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
ZnO-based thick-film microvaristors were investigated using impedance spectroscopy. Properties of planar and sandwich structures on alumina and LTCC substrates with different electrode material are compared. Experimental characteristics are approximated with electrical equivalent circuit. Fabrication technology influence on proposed model parameters is presented. Temperature dependent behavior is shown. Schottky barrier height was calculated as 0.46 eV and three electrop trap levels with activation energy of 0.17 eV, 0.25 eV and 0.38 eV were found.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M.W. Dudek, K. Nitsch, A. Dziedzic, T. Piasecki,