| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549356 | Microelectronics Reliability | 2011 | 8 Pages |
Abstract
The hot-carrier-induced (HCI) degradations of silicon-on-insulator (SOI) lateral insulated gate N-type bipolar transistor (NLIGBT) are investigated in detail by DC voltage stress experiment, TCAD simulation and charge pumping test. The substrate current Isub and on-state resistance Ron at different voltage stress conditions are measured to assess the HCI effect on device performance. The electric field and impact ionization rate are simulated to assist in providing better physical insights. And charge pumping current is measured to determinate the front-gate interface states density directly. The degradation mechanisms under different gate voltage stress conditions are then presented and summarized.
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Authors
Shifeng Zhang, Yan Han, Koubao Ding, Bin Zhang, Jiaxian Hu,