| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549518 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
A high efficiency 2D percolation model of RTS amplitudes in nanoscale MOSFETs based on the numerical results of potential and carriers density distributions in the channel obtained by solutions of coupled 2D Schrodinger and Poisson equations was presented. Using this model the dependences of relative RTS amplitudes ΔID/ID on device geometry Leff × Weff, tox bias conditions ID, VG and trap locations along the channel were simulated and analyzed for a set of square n-MOSFETs. The results show reasonable agreement with published numerical or experimental data.
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Authors
Ma Zhongfa, Zhang Peng, Wu Yong, Li Weihua, Zhuang Yiqi, Du Lei,