| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549565 | Microelectronics Reliability | 2009 | 9 Pages |
Abstract
A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs,