| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549568 | Microelectronics Reliability | 2009 | 8 Pages |
Abstract
A model is presented for external latchup. The effects of spacing, temperature, supply voltage and layout are captured in the model. The model shows a good fit to measurement results from two different technologies, RF-CMOS and SmartMOS.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Farzan Farbiz, Elyse Rosenbaum,