Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the ID(VGS, VDS) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct fitting to the drain current and indirect fitting to the measured source-to-drain resistance. The indirect fitting is shown to be advantageous in terms of fewer number of iterations needed and wider extent of initial guess values range.