| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549613 | Microelectronics Reliability | 2009 | 6 Pages |
Abstract
Based on the exact solution of two-dimensional Poisson’s equation, a novel subthreshold behavior model comprising channel potential, subthreshold swing, and threshold voltage for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s have been developed. The model is verified by its simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the ADMDG MOSFET’s.
Related Topics
Physical Sciences and Engineering
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Authors
Te-Kuang Chiang,