| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 549676 | Microelectronics Reliability | 2009 | 7 Pages |
Abstract
On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the short-channel tri-material gate-stack SOI MOSFET’s is developed. The model is verified by its good agreement with the numerical simulation of the device simulator MEDICI. The model not only offers physical insight into the device physics but also provides guidance for the basic design of the device.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Te-Kuang Chiang,