| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944798 | Microelectronics Journal | 2018 | 6 Pages |
Abstract
We confirmed that critical dimensions should be well-controlled to minimize the etch angles, which provide significant on-current reduction and program characteristics distortion. These results led to an appropriated standard to implement high stack 3D NAND flash memory.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Young-Taek Oh, Kyu-Beom Kim, Sang-Hoon Shin, Hahng Sim, Nguyen Van Toan, Takahito Ono, Yun-Heub Song,