Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6944908 | Microelectronics Journal | 2018 | 7 Pages |
Abstract
A balun inductorless wideband low noise amplifier (LNA) with active loads is proposed for multi-standard radio applications. The noise cancelling and current reuse techniques are combined to mitigate the need for high power consumption in conventional balun LNAs. This adds a degree of freedom for transconductance of common gate stage (gmCG). As a result, lower gmCG without degrading the input matching, allows a large scaling factor for common source (CS) stage in noise cancelling technique. Post-layout simulation results of the proposed LNA circuit in a 180â¯nm RF CMOS process show voltage gain of 20.2â¯dB, â3â¯dB bandwidth from 600â¯MHz to 3.15â¯GHz. The minimum NF is 2.37â¯dB with input return loss (S11) better than â13â¯dB in all frequency range and third input intercept point (IIP3) is â2.1â¯dBm. The circuit dissipates 6â¯mW from 1.5â¯V DC supply with an active area of 0.026â¯mm2.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
R. Eskandari, A. Ebrahimi, J. Sobhi,