| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944920 | Microelectronics Journal | 2018 | 5 Pages |
Abstract
A distortion analysis of InGaP/GaAs HBT is presented based on Volterra Series. The interdependence between emitter ballasting resistor and linearity has been quantitatively analyzed. An optimized emitter ballasted power amplifier (PA) is designed and fabricated. Third-order intermodulation (IM3) of the PA is suppressed by 3-8â¯dB without sacriï¬cing power gain and PAE. The theoretical calculation and measurement results show the optimization of emitter ballasting resistor is an alternative technique to improve PAs' linearity.
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Authors
Xiaodong Zhang, Xiaohong Sun, Feng Wang, Ting Tian, Huai Gao,