Compact conduction band model for transition-metal dichalcogenide alloys

Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 − xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal-oxide-semiconductor field-effect transistors. The compact conduction band model of effective mass approximation (EMA) with the second nonparabolic correction is proposed for monolayer Mo1 − xWxS2. The three band tight-binding (TB) method is used for calculating the band structure for monolayer TMD alloys such as Mo1 − xWxS2, and a compact conduction band model is precisely developed to fit the band structures of TMD alloys calculated with tight-binding methods for the calculation of electron mobility. The impact of alloys on electron mobility of monolayer Mo1 − xWxS2 is discussed in this study.