Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6945757 | Microelectronics Reliability | 2018 | 6 Pages |
Abstract
Based on 1â¯MeV electrons and 40â¯MeV Si ion irradiations, the contribution of ionization and displacement damage to the decrease in the minority carrier lifetime of gate controlled lateral PNP (GLPNP) transistors is investigated by gate sweeping (GS) technique. Molecular hydrogen is employed to increase the ionization radiation sensitivity and help to understand the relationship between the minority carrier lifetime and ionization damage. Experimental results show that 1â¯MeV electrons mainly induce ionization damage to GLPNP transistors, 40â¯MeV Si ions primarily produce displacement defects in silicon bulk. For 40â¯MeV Si ions, with increasing the irradiation dose, the densities of interface trap and oxide charge are almost no change, the minority carrier lifetime obviously decreases. The decrease of the minority carrier lifetime is due to bulk traps induce by 40â¯MeV Si ions. For 1â¯MeV electrons, with increasing the irradiation dose, the densities of interface trap and oxide charge for the GLPNP with and without soaked in H2 increase, and the minority carrier lifetime decreases. Compared with the GLPNP transistors without soaking in H2, the density of the interface traps the irradiated GLPNP transistors by 1â¯MeV electrons and soaked in H2 are larger and the minority carrier lifetime is lower. Therefore, both ionization and displacement damage can induce the decreases in the minority carrier lifetime including bulk minority carrier lifetime and surface minority carrier lifetime.
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Authors
Jianqun Yang, Xingji Li, Chaoming Liu, Daniel M. Fleetwood,