Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6945871 | Microelectronics Reliability | 2018 | 8 Pages |
Abstract
In spite of 50Â years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summarized and the main controversial aspects of each model are reviewed and contrasted.
Related Topics
Physical Sciences and Engineering
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Authors
James H. Stathis, Souvik Mahapatra, Tibor Grasser,