Article ID Journal Published Year Pages File Type
6945871 Microelectronics Reliability 2018 8 Pages PDF
Abstract
In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summarized and the main controversial aspects of each model are reviewed and contrasted.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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