| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6945892 | Microelectronics Reliability | 2018 | 8 Pages |
Abstract
Dislocation loop created by heavy ion irradiation in AlGaN/GaN HEMT observed using ultra high voltage electron microscope.50
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Authors
Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda,