Article ID Journal Published Year Pages File Type
6946087 Microelectronics Reliability 2017 5 Pages PDF
Abstract
Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (It2), small on-state resistance (RON), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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