Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946099 | Microelectronics Reliability | 2017 | 9 Pages |
Abstract
In this work, we build circuit models to understand the physics of electro-thermal instability and associated thermal runway in advanced ESD protection devices under filamentation. The circuit building methodology takes into account, the instability arising out of inhomogeneous triggering of 2 â D planar bipolar and looks into inherent instability causing the 3 â D phenomenon. Subsequently, the electro-thermal coupling is analyzed to get SPICE model, as we develop a physics based methodology to comprehend the 3 â D localization in the device. Furthermore, we understand the instability through appropriate modeling of localization behavior using area factor (α) and related electro-thermal circuit models.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Dheeraj Kumar Sinha, Amitabh Chatterjee,