Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946159 | Microelectronics Reliability | 2017 | 10 Pages |
Abstract
I-V characteristics and reliability parameters for the set of hardened SOI MOSFET's with special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current rise; for tungsten metallization (contacts, conductor lines and vias) I-T and R-T characteristics, failure time. The SOI MOSFET standard compact SPICE model BSIMSOI with traditional temperature limit of 150 °C is modified to be used for CMOS IC simulation in the extended temperature range up to 300 °C. The results indicate that the 0.5-0.18 μm SOI MOSFET's with tungsten metallization have stable electrical behavior that makes them possible to be used during implementation of HT CMOS IC's (to 300 °C).
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Authors
Konstantin O. Petrosyants, Igor A. Kharitonov, Sergey V. Lebedev, Lev M. Sambursky, Sergey O. Safonov, Veniamin G. Stakhin,