Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946233 | Microelectronics Reliability | 2016 | 8 Pages |
Abstract
Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Evgeny Pikhay, Yakov Roizin, Yael Nemirovsky,