Article ID Journal Published Year Pages File Type
6946247 Microelectronics Reliability 2016 5 Pages PDF
Abstract
In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.
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Preview
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment
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