Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946464 | Microelectronics Reliability | 2015 | 5 Pages |
Abstract
We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5Â V to 1.2Â V sense/read voltage, and 0.95Â V to 2Â V writing voltage, by using an industrial 28Â nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.
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Authors
H. Cai, Y. Wang, L.A.B. Naviner, W.S. Zhao,