Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946611 | Microelectronics Reliability | 2015 | 5 Pages |
Abstract
An experimental characterization of the behavior of GaN power HEMTs during heavy ion irradiation is presented. It is demonstrated that normally off GaN power HEMTs are affected by a significant charge amplification mechanism. These devices are subjected to damages implying relevant increases of the drain leakage current. The damages are permanent and cumulative and depend on the biasing conditions. Higher voltage devices rated at 100Â V and 200Â V suffer from Single Event Burnouts which take place at biasing voltages lower than the maximum rated one.
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Authors
C. Abbate, G. Busatto, F. Iannuzzo, S. Mattiazzo, A. Sanseverino, L. Silvestrin, D. Tedesco, F. Velardi,