Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946712 | Microelectronics Reliability | 2015 | 5 Pages |
Abstract
The effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I-V measurements, drain-current transient spectroscopy, XRD, and RF stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and lower DIBL) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher dynamic current dispersion, ascribed to higher concentration of the deep levels E2 (0.56 eV/10â 15 cm2) and E4 (0.84 eV/10â 14 cm2).
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Authors
D. Bisi, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo, A. Chini, F. Soci, A. Pantellini, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di Forte-Poisson, D. De Salvador, M. Bazzan, G. Meneghesso, E. Zanoni,