Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946812 | Microelectronics Reliability | 2014 | 6 Pages |
Abstract
Noise is a key indicator of the physical phenomenon underlying device operation, defect density and degradation trends. The analysis of noise in the frequency domain and the exponent (value of slope, α on logarithmic scale) of the power spectral density (PSD) can provide useful insight on the operating and failure mechanism of any device/system. We shall use this noise as a prognostic indicator to detect the instant at which the retention loss of a non-volatile memory device begins to occur. A qualitative perspective to prognostic management of a resistive random access memory (RRAM) device is provided in this work. Our method of detecting retention loss involves the unique observation of a slope of α = 3/2, which arises due to diffusion or ionic migration phenomenon.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey,