| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946829 | Microelectronics Reliability | 2014 | 4 Pages |
Abstract
The degradation of BiCMOS operational amplifiers TLV2451CP under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. It is shown that studied devices are sensitive to both enhanced low dose rate sensitivity and time-dependent effects. Evidently the main reason for degradation of studied devices is build-up of the interface traps. Obtained results show possibility to develop an approach for total ionizing dose testing of BiCMOS devices considering low dose rate effects.
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Computer Science
Hardware and Architecture
Authors
A.S. Petrov, K.I. Tapero, V.N. Ulimov,