| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946849 | Microelectronics Reliability | 2014 | 5 Pages |
Abstract
In this paper advanced sample preparation techniques based on focused ion beam (FIB) optimized for TEM investigation of high electron mobility transistor (HEMT) structures are presented. It is shown that the usage of an innovative in-situ lift-out method combined with X2 window and backside milling techniques as well as live thickness control and end point detection can significantly improve the quality of electron transparent samples required for high resolution TEM investigations. This advanced preparation flow is evaluated and demonstrated at GaN HEMT structures for atomic resolution TEM investigation.
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Authors
Michél Simon-Najasek, Susanne Huebner, Frank Altmann, Andreas Graff,