| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946867 | Microelectronics Reliability | 2014 | 6 Pages |
Abstract
The influence of the different liner material stacks Ti-N/Ti, Ta-N/Ta and Ta-N/Ru on the microstructure of 1 μm thick sputtered Cu films is examined prior to and after annealing. It is shown that the liner has an impact on the crystallographic orientation distribution of the Cu grains and seriously affects the defect density in the Cu films. The measured Cu resistivity shows a strong dependence on the microstrain.
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Authors
David Gross, Sabine Haag, Martin Schneider-Ramelow, Klaus-Dieter Lang,