| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946870 | Microelectronics Reliability | 2014 | 6 Pages |
Abstract
Compact model for expressing turn-off waveform for advanced trench gate IGBTs is proposed even under high current density condition. The model is analytically formulated only with device structure parameters so that no fitting parameters are required. The validity of the model is confirmed with TCAD simulation for 1.2-6.5Â kV class IGBTs. The proposed turn-off model is sufficiently accurate to calculate trade-off curve between turn-off loss and saturation collector voltage under extremely high current conduction, so that the model can be used for system design with the advanced trench gate IGBTs.
Related Topics
Physical Sciences and Engineering
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Authors
J. Takaishi, S. Harada, M. Tsukuda, I. Omura,