Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946904 | Microelectronics Reliability | 2014 | 5 Pages |
Abstract
A procedure for doping concentration calibration using Scanning Microwave Microscopy (SMM) is presented. Calibration measurements are performed at a purpose-built sample comprising a wide range of doping concentrations of both n- and p-type implants at the sample surface. In order to evaluate the criticality of parameters affecting the measured signal, a transmission line model is used that takes into account the physical elements forming the evaluated network including modelling parameters for the tip-sample-interaction. Using a vertical DMOS sample a showcase flow for quantification is exercised and the attainable degree of accuracy is discussed.
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Authors
T. Schweinböck, S. Hommel,