| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946907 | Microelectronics Reliability | 2014 | 5 Pages |
Abstract
In this paper we present backside EOP signal measurements from bipolar devices. We compare these measurements on a failed transistor and on a reference transistor and we interpret the results according to a model previously developed for silicon devices (MOS and Bipolar).
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Authors
M.M. Rebaï, F. Darracq, J.-P. Guillet, E. Bernou, K. Sanchez, P. Perdu, D. Lewis,