Backside spectroscopic photon emission microscopy using intensified silicon CCD

A typical solution for backside analysis of photon emissions from semiconductor integrated circuits has been the InGaAs detector. It takes advantage of the transparency of the silicon material to wavelengths within its spectral sensitivity regime. However, it has been recently demonstrated that light spectral information extraction is more reliable when using silicon CCDs (SiCCDs) assisted by proper backside bulk Si thinning of the device. In this paper we demonstrate further improvement of the photon emission spectrum acquisition using the solid-state intensified silicon CCD (SI-CCD). Using the presented solution it is possible to significantly reduce the analysis time, expand the detectable spectral regime as well as improve the spectral wavelength resolution.