| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946918 | Microelectronics Reliability | 2014 | 5 Pages |
Abstract
A 1300Â nm InGaAsP laser diode, degraded after the application of high voltage ESD pulses in forward direction, showed after degradation a strong longitudinal mode suppression, resulting in a single mode emission spectrum identical to the one of a cleaved-coupled-cavity laser. The room temperature threshold current after ESD induced degradation increased by about 50% and the differential quantum efficiency dropped substantially. However, even after degradation in a wide temperature range stable single mode laser operation has been achieved.
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Authors
H.C. Neitzert, G. Landi,