| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946966 | Microelectronics Reliability | 2012 | 6 Pages |
Abstract
This paper deals with performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology. The purpose of this article is to evaluate the abilities and effects of each technology on the conception of power converter for avionic applications. Experimental measurements of steady-on-state resistance dependence and transient performances with temperature are presented and discussed. The second section focuses mainly on robustness aspects of the two types of power transistors in order to analyze their capability to withstand with aeronautic harsh environmental constrains.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
D. Othman, M. Berkani, S. Lefebvre, A. Ibrahim, Z. Khatir, A. Bouzourene,