| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947005 | Microelectronics Reliability | 2012 | 6 Pages |
Abstract
⺠We model charge (de)trapping dynamics in oxides traps using a kinetic Monte-Carlo simulator. ⺠Random dopants fluctuations induce dispersion in trap assisted tunnelling current. ⺠Electron concentration dispersion rather than tunnelling barrier is responsible for this spread. ⺠Only a few number of traps are involved in tunnelling processes. ⺠Trap density extraction are skewed by random dopant fluctuations.
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Authors
L. Gerrer, S. Markov, S.M. Amoroso, F. Adamu-Lema, A. Asenov,