Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90Â nm technology

This paper presents the electrical model of a PMOS transistor in 90 nm technology under 1064 nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate the effect of a continuous wave laser on a PMOS transistor by taking into account the laser's parameters (i.e. spot size and location, or power) and the PMOS' geometry and bias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS.