Backside failure analysis application of light scattering for active silicon defect detection

This paper demonstrated the interest of EMission MIcroscopy (EMMI) combined with light scattering imaging using a confocal microscope for backside active silicon defect detection. Full backside failure analyses are presented from the fault localization to the TEM observation of a stacking fault. The backside laser imaging technique highlighted contrast anomalies at exact defect locations. The crystalline defects are acting as scattering centres. The light scattering interpretation is discussed and compared with conventional backside observed signatures.