| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947124 | Microelectronics Reliability | 2012 | 5 Pages |
Abstract
DC and pulsed measurements were carried out on several multifinger GaAs pHEMTs characterized by different gate width values. Results provide information on the dependence of the thermal characteristics of the HEMTs on the main device parameters, and on the differences between the methods adopted for RTH extrapolation. Moreover, DC analysis and infrared thermography was extended to complete MMIC structures: experimental results provide information on the cross-thermal resistance existing between the different components of the analyzed circuits, as a function of the operating conditions of each stage.
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Authors
I. Rossetto, M. Meneghini, T. Tomasi, D. Yufeng, G. Meneghesso, E. Zanoni,